Weng W. Chow. Influences of excitation-dependent bandstructure changes on Ingan light-emitting diode efficiency

Natural Sciences / Physics / Optics

Submitted on: May 08, 2012, 13:51:25

Description: Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and kcdotp equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation.

The Library of Congress (USA) reference page : http://lccn.loc.gov/cn2013300046.

To read the article posted on Intellectual Archive web site please click the link below.


© Shiny World Corp., 2011-2024. All rights reserved. To reach us please send an e-mail to support@IntellectualArchive.com