Weng W. Chow. Influences of excitation-dependent bandstructure changes on Ingan light-emitting diode efficiency


Natural Sciences / Physics / Optics

Submitted on: May 08, 2012, 13:51:25

Description: Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and kcdotp equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation.

The abstract of this article has been published in the "Intellectual Archive Bulletin" , May 2012, ISSN 1929-1329.

The Library and Archives Canada reference page: collectionscanada.gc.ca/ourl/res.php?url_ver=Z39.88......

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Weng_Chow__InGaN_light-emitting_diode_efficiency.pdf



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